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AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27m (VGS = 10V) RDS(ON) < 32m (VGS = 4.5V) RDS(ON) < 50m (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested!
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1 G1
D1
D2
SOIC-8
G2 S1 S2
Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation B Avalanche Current
B
Maximum 30 12 6.9 5.8 40 1.9 1.2 12 22 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C
B
ID IDM PD IAR EAR TJ, TSTG
W A mJ C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientAF Maximum Junction-to-AmbientA Maximum Junction-to-LeadC
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 55 90 40
Max 62.5 110 48
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4800B/L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=10V, I D=6.9A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, I D=6A VGS=2.5V, I D=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 10 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 40 20 25 23 34 26 0.71 1 4.5 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, V DS=15V, I D=8.5A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=1.8, RGEN=6 IF=5A, dI/dt=100A/s IF=5A, dI/dt=100A/s 3.5 21.5 2.7 16.8 8 20 12 1.5 12 1100 27 40 32 50 1 Min 30 0.002 1 5 100 1.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1 : Dec 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID (A) 30 2.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 60 1.7 50 RDS(ON) (m) 40 30 20 VGS=10V 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance VGS=2.5V 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5 VGS=10V VGS=2.5V VGS=2.5V VGS=10V VGS=4.5V VGS=2V 10V 4.5V 3V ID(A) 16 12 125C 8 25C 4 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V 20
VGS=4.5V
100 90 80 RDS(ON) (m) 70 60 50 125C IS (A) ID=6.9A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125C
40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25C 1.0E-04 COMPONENTS IN25C SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING LIFE 30 1.0E-05 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=15V ID=6.9A Capacitance (pF) 1200 1000 800 600 400 Crss Coss Ciss
100.0 RDS(ON) limited ID (Amps) 10.0 10s 1.0 DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150C TA=25C
50 40 Power (W) 30 20 10 0 100
0.0001 0.001 0.01 0.1 1 10 100 1000
TJ(Max)=150C TA=25C
1ms 10ms 10s 1s
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.1 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING Ton OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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